March 29, 2011Joint Institute for Nuclear Research for CERN COMPASS Experiment to Use Solid-State Photo Detectors
February 10, 2010Prestigious University to use Zecotek's LFS Crystals for Next-Generation PET Program
April 15, 2009Zecotek Establishes Ongoing Relationship with CERN with Initial Order of MAPD photo detectors
March 03, 2009Zecotek Closes Financing and Receives Grant Money from the Gov't of Malaysia and Singapore
December 03, 2007Demonstration of 32 inch 3D Display and Insight Media to Advise with 3D Market Entry
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China Patent Granted for MAPD Solid-State Photo Detectors
August 08, 2012
Zecotek Receives Notification from the Chinese Patent Office for the Granting of Patent for its MAPD Solid-State Photo Detector
Singapore, August 8, 2012 - Zecotek Photonics Inc. (TSX-V: ZMS; Frankfurt: W1I), a developer of leading-edge photonics technologies for medical, industrial and scientific markets, today announced that it has received Notice of Allowance from the Chinese State Intellectual Property Office for its Micro-channel Avalanche Photodiode (MAPD) solid-state photo detector. The Chinese Notification for Patent is the second patent granted for the MAPD solid-state photo detector, the first patent was granted by Russia in March 2008. Patents have been filed and are pending in other jurisdictions including the United States.
"Our MAPD solid-state photo-detectors are gaining market share with prestigious institutions such as CERN and are key alternative components for the development of new generation PET scanners, making the protection of the underlying MAPD technology of paramount importance,” said Dr. A.F. Zerrouk, Chairman, President, and CEO of Zecotek Photonics Inc. “The MAPD is now patented in Russian and China and patents are pending in other countries including the United States. We will continue to be vigilant with respect to the security of our technologies patent portfolio.”
Zecotek’s proprietary MAPD-3N is a design upgrade of the previously announced MAPD. It offers significant performance-cost advantages over competing photomultiplier tubes (PMT) and other solid-state, silicon based photo-detectors. Its good recovery time, its unique radiation hardness and its display of the highest possible linearity, make it a prime component for the improved detector designs required in the next crucial phase of high energy experiments at CERN. Its low manufacturing cost, excellent timing resolution and Photon Detection Efficiency are key characteristics for the new configurations of high resolution PET (Positron Emission Tomography) scanners.
The MAPD-3N is supplied to customers through Zecotek Imaging Systems Pte. Ltd., Singapore, a wholly owned subsidiary of Zecotek Photonics Inc., and manufactured under contract by the National NanoFab Center, Daejeon City, South Korea.
This press release may contain forward-looking statements that are based on management’s expectations, estimates, projections and assumptions. These statements are not guarantees of future performance and involve certain risks and uncertainties, which are difficult to predict. Therefore, actual future results and trends may differ materially from what may have been stated.
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